Sources and reading list
Key references used to build this GaN HEMT knowledge base. Mix of classic device physics, open reviews, standards, vendor data, and recent 2023–2026 research.
Reading list
- Mishra, Parikh, Wu — AlGaN/GaN HEMTs overview, Proc. IEEE, 2002
- Roccaforte et al. — Normally-off GaN HEMTs overview, Materials, 2019
- Zou et al. — Trap characterization techniques for GaN HEMTs, Micromachines, 2023
- Sun et al. — High-power and high-frequency AlGaN/GaN HEMT applications review, 2022
- Wang et al. — p-GaN gate characteristics review, Micromachines, 2024
- Ajayan et al. — Reliability issues in p-GaN gated E-mode HEMTs, IEEE Access, 2025
- Yin et al. — Frequency-dependent gate breakdown in p-GaN/AlGaN/GaN HEMTs, APL, 2024
- Meneghini et al. — Vertical GaN reliability challenges, IEDM 2024
- Fan et al. — GaN-on-diamond technology for next-generation power devices, 2025
- XHEMTs on ultrawide-bandgap single-crystal AlN substrates, 2025
- JEDEC JEP173 — Dynamic ON-resistance test method for GaN HEMTs
- JEDEC JEP182 — Continuous-switching evaluation of GaN devices
- TI LMG3522R030-Q1 650 V integrated GaN FET datasheet
- Ku-band GaN HEMT power amplifier review, 2024
- GaN RF devices and power amplifiers for 5G review
Research notes
Source quality varies. Classic physics papers and review articles are useful for stable fundamentals. Recent 2024–2026 papers are useful for direction-of-travel, but some are early-access, conference, or paywalled, and metadata may still change. Vendor datasheets and JEDEC documents ground the applied side, but they should be read as product/qualification context rather than neutral device-physics reviews.